FDFME3N311ZT datasheet, diode equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
* Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
* Low profile: 0.55 mm maximum in th.

Application

It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected .

Description

* Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A
* Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A
* Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
* Free from halogenated compounds and antimony oxides
* H.

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